Abstract:
This thesis reports studies on the interface between GaAs and the conductive
polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in a
planer Schottky diode architecture. The temperature dependence of the Schottky barrier
height of the GaAs-PEDOT:PSS junction was found to be most accurately modeled
using an interfacial layer model indicating that an oxide layer is forming at the
interface. It has been found that chalcogenide passivation layers deposited from
solution onto the GaAs surface did not improve device performance indicating that the
passivation layer does not survive the PEDOT:PSS deposition. Small increases in pH of
the PEDOT:PSS solution caused by the addition ofNH40H have been found to increase
the fill factor of GaAs-PEDOT:PSS devices slightly, likely due to physical
rearrangement of the polymer chains.
Description:
36 pages. A thesis presented to the Department of Chemistry and the Clark Honors College of the University of Oregon in partial fulfillment of the requirements for degree of Bachelor of Science, Summer 2014.